Vishay TrenchFET P-Channel MOSFET, -104 A, -20 V Enhancement, 8-Pin PowerPAK 1212-8SH SISH521EDN-T1-GE3
- RS庫存編號:
- 735-266
- 製造零件編號:
- SISH521EDN-T1-GE3
- 製造商:
- Vishay
N
可享批量折扣
小計（1 件）*
TWD27.00
(不含稅)
TWD28.35
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 24 | TWD27.00 |
| 25 - 99 | TWD18.00 |
| 100 + | TWD9.00 |
* 參考價格
- RS庫存編號:
- 735-266
- 製造零件編號:
- SISH521EDN-T1-GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -104A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | PowerPAK 1212-8SH | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.006Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 102nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.4 mm | |
| Height | 0.98mm | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -104A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type PowerPAK 1212-8SH | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.006Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 102nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 3.4 mm | ||
Height 0.98mm | ||
Length 3.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
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