Vishay TrenchFET Type N, Type N-Channel MOSFET, 67.4 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH SiSH536DN-T1-GE3
- RS庫存編號:
- 228-2929
- 製造零件編號:
- SiSH536DN-T1-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 228-2929
- 製造零件編號:
- SiSH536DN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 67.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212-8SH | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 26.5W | |
| Typical Gate Charge Qg @ Vgs | 16.6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 67.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212-8SH | ||
Mount Type Surface, Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.25mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 26.5W | ||
Typical Gate Charge Qg @ Vgs 16.6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 30 V (D-S) MOSFET.
100 % Rg and UIS tested