製造零件編號

Vishay SiSHA04DN Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH

RS庫存編號:: 188-4896
製造零件編號:: SISHA04DN-T1-GE3
製造商:: Vishay

Vishay SiSHA04DN Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH

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可享批量折扣

小計（1 卷，共 3000 件）*

TWD43,800.00

(不含稅)

TWD45,990.00

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每卷*
3000 - 12000	TWD14.60	TWD43,800.00
15000 +	TWD14.30	TWD42,900.00

* 參考價格

RS庫存編號:: 188-4896
製造零件編號:: SISHA04DN-T1-GE3
製造商:: Vishay

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK 1212-8SH
	Series	SiSHA04DN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.00215Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	52W
	Typical Gate Charge Qg @ Vgs	22.5nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Height	0.93mm
	Width	3.3 mm
	Length	3.3mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK 1212-8SH
	Series SiSHA04DN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.00215Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 52W
	Typical Gate Charge Qg @ Vgs 22.5nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Height 0.93mm
	Width 3.3 mm
	Length 3.3mm
	Standards/Approvals No
	Automotive Standard No

Datasheet SISHA04DN-T1-GE3

N-Channel 30 V (D-S) MOSFET.

TrenchFET ® Gen IV power MOSFET

Vishay SiSHA04DN Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8SH

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