Vishay SiSS26LDN Type N-Channel MOSFET, 81.2 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SISS26LDN-T1-GE3
- RS庫存編號:
- 188-5033
- 製造零件編號:
- SISS26LDN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD304.00
(不含稅)
TWD319.20
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月20日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD30.40 | TWD304.00 |
| 750 - 1490 | TWD29.60 | TWD296.00 |
| 1500 + | TWD29.20 | TWD292.00 |
* 參考價格
- RS庫存編號:
- 188-5033
- 製造零件編號:
- SISS26LDN-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 81.2A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS26LDN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 31.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Width | 3.3 mm | |
| Height | 0.78mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 81.2A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212 | ||
Series SiSS26LDN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 31.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Width 3.3 mm | ||
Height 0.78mm | ||
Automotive Standard No | ||
N-Channel 60 V (D-S) MOSFET.
TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
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