Vishay TrenchFET Type P-Channel MOSFET, 3.8 A, 200 V, 8-Pin PowerPAK 1212-8

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RS庫存編號:
180-7307
製造零件編號:
SI7119DN-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.8A

Maximum Drain Source Voltage Vds

200V

Package Type

PowerPAK 1212-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.1Ω

Typical Gate Charge Qg @ Vgs

10.6nC

Minimum Operating Temperature

50°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

52W

Maximum Operating Temperature

150°C

Height

1.07mm

Standards/Approvals

IEC 61249-2-21

Width

3.3 mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 200V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 1050mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 52W and continuous drain current of 3.8A. This product has been optimized for lower switching and conduction losses. It has applications in the active clamp in intermediate DC/DC power supplies. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Low thermal resistance powerpak package with small size and low 1.07 mm profile

• Maximum dissipation power 52W

• Operating temperature ranges between -50°C and 150°C

• TrenchFET power MOSFET

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested

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