Vishay E Type N-Channel Power MOSFET, 51 A, 600 V Enhancement, 4-Pin PowerPAK

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RS庫存編號:
653-178
製造零件編號:
SIHM080N60E-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

600V

Series

E

Package Type

PowerPAK

Mount Type

PCB

Pin Count

4

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

500W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

42nC

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

8mm

Width

7.9mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 51A Drain Current - SIHM080N60E-T1-GE3


This power MOSFET is a high-voltage switching device intended for power-conversion and control applications in industrial electronics. It functions as an enhancement-mode N-channel transistor designed to handle high drain-to-source voltages while operating on PCB-mounted assemblies. Its construction suits demanding thermal environments and standard manufacturing processes.

Features and Benefits:


• 600V rating for high-voltage switching applications • 51 A continuous drain current for substantial load handling • 0.084 Ω Rds(on) for reduced conduction losses • 42 nC typical gate charge for predictable gate-drive sizing • 500W power dissipation for elevated power-handling capability • 150 °C maximum operating temperature for high-temperature tolerance

Applications


• Suitable for switch-mode power supplies in industrial automation • Ideal for motor-drive inverter stages in manufacturing equipment • Used for high-voltage DC-DC converters in power distribution • Can be used for hard-switched topologies in testing rigs • Suitable for intermediate circuits in renewable-energy inverters

What mounting style is required for circuit implementation?


It is designed for PCB mounting using a PowerPAK package with four pins to facilitate thermal and electrical connection.

How should gate-drive voltages be selected?


Gate-drive amplitude must not exceed the ±30V gate-source limit and should be chosen to balance switching speed with the 42 nC gate charge to control losses.

What ambient temperature range can it operate within?


The device supports operation down to -55 °C and up to 150 °C junction temperature, enabling use across wide environmental conditions.

How does the package assist thermal management?


The PowerPAK form factor provides a Compact thermal path to the PCB, helping to dissipate up to the specified 500W under appropriate board-level cooling strategies.

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