Vishay E Type N-Channel Power MOSFET, 48 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3

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RS庫存編號:
239-8633
製造零件編號:
SIHK045N60E-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

PowerPAK 10 x 12

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.043Ω

Channel Mode

Depletion

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

98nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

278W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 48A Maximum Continuous Drain Current - SIHK045N60E-T1-GE3


This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in demanding electronic systems. It offers elevated voltage capability and substantial current handling for use in surface-mounted designs where thermal and electrical performance are critical. The device complies with industry lead-free standards and meets automotive qualification for use in vehicle electronics.

Features and Benefits:


• 650V rating for high-voltage switching applications
• 48A continuous drain current for heavy load handling
• 0.043Ω low on-resistance to reduce conduction losses
• 278W power dissipation for improved thermal endurance
• 98nC typical gate charge for predictable switching behaviour
• 30V gate tolerance enabling robust drive margin

Applications


• Suitable for offline power supplies requiring high blocking voltage
• Ideal for automotive power management and motor drive circuits
• Used with DC-DC converters in industrial equipment
• Can be used for inverter stages in renewable-energy systems
• Suitable for compact surface-mount power modules

What thermal extremes can the device tolerate in operation?


It operates across a wide temperature span from -55°C up to +150°C, suitable for harsh ambient conditions.

How is the device packaged for PCB assembly?


It is supplied in a low-profile PowerPAK10x12 surface-mount package optimised for heat dissipation and automated placement.

What gate drive limitations should designers observe?


The gate must be driven within ±30V to avoid gate-source overstress during switching events.

Does the device suit automotive qualification requirements?


It meets AEC‑Q101 automotive standards, making it appropriate for vehicle electronic subsystems.

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