Vishay E Type N-Channel MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3
- RS庫存編號:
- 239-8636
- 製造零件編號:
- SIHK055N60E-T1-GE3
- 製造商:
- Vishay
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TWD257.00
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TWD269.85
(含稅)
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* 參考價格
- RS庫存編號:
- 239-8636
- 製造零件編號:
- SIHK055N60E-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.05Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 236W | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.05Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 236W | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay E series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.
4th generation E series technology
Low effective capacitance
Low switching and conduction losses
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