Vishay E Type N-Channel Power MOSFET, 42 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12
- RS庫存編號:
- 239-8635
- 製造零件編號:
- SIHK055N60E-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2000 件）*
TWD363,000.00
(不含稅)
TWD381,160.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,000 件從 2026年6月26日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 8000 | TWD181.50 | TWD363,000.00 |
| 10000 + | TWD176.10 | TWD352,200.00 |
* 參考價格
- RS庫存編號:
- 239-8635
- 製造零件編號:
- SIHK055N60E-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.056Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 236W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.056Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 236W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 42A Maximum Continuous Drain Current - SIHK055N60E-T1-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power management in demanding industrial and automotive contexts. It operates across a wide temperature range and is intended for surface-mounted assemblies where robust high-voltage handling and Compact packaging are required.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications • 42A continuous drain current supports heavy-load operation • 0.056Ω low Rds(on) reduces conduction losses • 54nC typical gate charge balances switching speed and drive effort • 236W power dissipation allows sustained power handling • Rated to +150°C for elevated-temperature environments
Applications
• Suitable for power conversion stages in industrial automation • Ideal for motor drive inverter switching circuits • Used for high-voltage DC-DC converters in electrical systems • Can be used for automotive power management modules that require AEC-Q101 qualification
What mounting style is required for board assembly?
It is supplied in a PowerPAK 10x12 surface package with eight pins designed for surface-mount soldering processes and thermal conduction to the PCB.
How does the gate drive requirement affect controller selection?
The device supports gate-source voltages up to 30V and has a typical gate charge of 54nC, so drivers must source sufficient charge for desired switching transitions while remaining within the VGS limit.
What environmental extremes can it withstand during operation?
The component is specified for operation from -55°C up to +150°C, enabling use across a broad ambient and junction temperature range in harsh settings.
Are there industry approvals relevant to automotive use?
It meets AEC-Q101 standards for automotive-grade semiconductors and is RoHS compliant for material restrictions.
相關連結
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3