Vishay E Type N-Channel Power MOSFET, 47 A, 700 V Enhancement, 3-Pin TO-247AD SQW44N65EF-GE3

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RS庫存編號:
228-2976
製造零件編號:
SQW44N65EF-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-247AD

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

73mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

500W

Typical Gate Charge Qg @ Vgs

177nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Vishay Series E Power MOSFET, 700V Drain Source Voltage, 47A Continuous Drain Current - SQW44N65EF-GE3


This power MOSFET is a high-voltage switching transistor designed for demanding electronic applications requiring substantial current handling and elevated temperature endurance. It is an N‑channel enhancement device supplied in a through-hole TO-247AD package and suited to power conversion, motor drives and industrial switching environments where compact, mountable components are needed.

Features and Benefits:


• 700V drain rating enables high-voltage system designs
• 47A continuous drain current supports heavy-load switching
• 73mΩ Rds(on) minimises conduction losses under load
• 177nC typical gate charge reduces switching losses
• 500W maximum power dissipation handles elevated thermal load
• -55 to 175°C operating range sustains wide temperature extremes

Applications


• Suitable for high-voltage power supplies and inverters
• Ideal for traction or industrial motor drive stages
• Used for hard-switching and soft-switching topologies
• Can be used for renewable energy converter electronics
• Appropriate for automotive electronic modules requiring AEC‑Q101

What mounting considerations apply to this component?


The device uses a through-hole mount in a TO-247AD package, allowing direct heatsinking with a suitable insulated or bare tab and conventional screw mounting for thermal management.

How does gate handling affect switching performance?


With a typical gate charge of 177nC, gate-driver selection must provide sufficient peak current to achieve the required dv/dt and minimise transition losses.

What thermal stresses can it tolerate during operation?


The transistor is specified to operate between -55°C and 175°C, so PCB layout and cooling must be designed to keep junction temperature within that range under rated dissipation.

Are there any automotive considerations for usage?


It meets AEC‑Q101 qualification, making it suitable for automotive electronic systems where the specified qualification is required.

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