MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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RS庫存編號 920-6588
製造零件編號STW11NK100Z
TWD168.20
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N 8.3 A 1000 V 1.38 Ω TO-247 Through Hole 3 -30 V, +30 V Enhancement 4.5V 3V 230 W Single 1
RS庫存編號 639-5562
製造零件編號SSM3K15FS(TE85L,F)
BrandToshiba
TWD3.20
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N 100 mA 30 V 7 Ω SSM Surface Mount 3 -20 V, +20 V Enhancement 1.5V - 100 mW Single 1
RS庫存編號 178-0920
製造零件編號IRFD9110PBF
BrandVishay
TWD18.40
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製造零件編號IPW60R190P6FKSA1
BrandInfineon
TWD94.20
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N 20 A 650 V 190 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 4.5V 3.5V 151 W Single 1
RS庫存編號 145-4531
製造零件編號FQP7P06
TWD26.10
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P 7 A 60 V 410 mΩ TO-220AB Through Hole 3 -25 V, +25 V Enhancement - 2V 45 W Single 1
RS庫存編號 914-0236
製造零件編號IPW50R190CEFKSA1
BrandInfineon
TWD70.20
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N 18.5 A 550 V 190 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 3.5V 2.5V 127 W Single 1
RS庫存編號 671-0441
製造零件編號FDN357N
TWD16.60
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N 1.9 A 30 V 600 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1V 500 mW Single 1
RS庫存編號 541-0749
製造零件編號IRFD9110PBF
BrandVishay
TWD31.00
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P 700 mA 100 V 1.2 Ω HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1
RS庫存編號 169-7186
製造零件編號DMN1150UFB-7B
TWD2.00
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N 1.4 A 12 V 210 mΩ X1-DFN1006 Surface Mount 3 -6 V, +6 V Enhancement 1V - 500 mW Single 1
RS庫存編號 542-9557
製造零件編號IRFBF30PBF
BrandVishay
TWD75.00
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N 3.6 A 900 V 3.7 Ω TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS庫存編號 671-1074
製造零件編號NDS0610
TWD7.10
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P 120 mA 60 V 10 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1V 360 mW Single 1
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製造零件編號FDY300NZ
TWD12.20
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N 600 mA 20 V 240 mΩ SOT-523 (SC-89) Surface Mount 3 -12 V, +12 V Enhancement - 0.6V 625 mW Single 1
RS庫存編號 806-3595
製造零件編號FDPF18N50T
TWD97.00
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N 18 A 500 V 265 mΩ TO-220F Through Hole 3 -30 V, +30 V Enhancement - 3V 38.5 W Single 1
RS庫存編號 671-5183
製造零件編號FQP7P06
TWD34.60
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P 7 A 60 V 410 mΩ TO-220AB Through Hole 3 -25 V, +25 V Enhancement - 2V 45 W Single 1
RS庫存編號 166-2664
製造零件編號FDY300NZ
TWD4.70
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N 600 mA 20 V 240 mΩ SOT-523 (SC-89) Surface Mount 3 -12 V, +12 V Enhancement - 0.6V 625 mW Single 1
RS庫存編號 687-5318
製造零件編號STW11NK100Z
TWD198.00
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N 8.3 A 1000 V 1.38 Ω TO-247 Through Hole 3 -30 V, +30 V Enhancement 4.5V 3V 230 W Single 1
RS庫存編號 541-1691
製造零件編號IRFD120PBF
BrandVishay
TWD30.00
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N 1.3 A 100 V 270 mΩ HVMDIP Through Hole 4 -20 V, +20 V Enhancement - 2V 1.3 W Single 1
RS庫存編號 820-8867
製造零件編號IRFS7530TRL7PP
BrandInfineon
TWD96.00
/個 (每包:2個)
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製造零件編號IPW60R190P6FKSA1
BrandInfineon
TWD106.30
毎管:30 個
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N 20 A 650 V 190 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 4.5V 3.5V 151 W Single 1
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TWD4.20
個 (在毎卷:3000)
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N 1.9 A 30 V 600 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement - 1V 500 mW Single 1