onsemi 2N7002 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002

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包裝方式：
RS庫存編號:
671-0312
Distrelec 貨號:
304-08-906
製造零件編號:
2N7002
製造商:
onsemi
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品牌

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

115mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

2N7002

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.5Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

200mW

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

223nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.93mm

Length

2.92mm

Width

1.3 mm

Automotive Standard

AEC-Q100, AEC-Q200, AEC-Q101

COO (Country of Origin):
CN

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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