製造零件編號

Microchip 2N7002 Type N-Channel Single MOSFETs, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-G

RS庫存編號:: 644-261
製造零件編號:: 2N7002-G
製造商:: Microchip

Microchip 2N7002 Type N-Channel Single MOSFETs, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-G

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 組，共 10 件）*

TWD152.00

(不含稅)

TWD159.60

訂單超過 $1,300.00 免費送貨

有庫存

2,560 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每膠帶*
10 - 90	TWD15.20	TWD152.00
100 - 490	TWD13.40	TWD134.00
500 - 990	TWD12.00	TWD120.00
1000 +	TWD9.50	TWD95.00

* 參考價格

RS庫存編號:: 644-261
製造零件編號:: 2N7002-G
製造商:: Microchip

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Microchip
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	115mA
	Maximum Drain Source Voltage Vds	60V
	Series	2N7002
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Power Dissipation Pd	0.36W
	Maximum Gate Source Voltage Vgs	±30 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	1.3 mm
	Length	2.9mm
	Height	1.12mm
	Standards/Approvals	Lead (Pb)-free/RoHS
	Automotive Standard	No

	選取全部
	品牌 Microchip
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 115mA
	Maximum Drain Source Voltage Vds 60V
	Series 2N7002
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Power Dissipation Pd 0.36W
	Maximum Gate Source Voltage Vgs ±30 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 1.3 mm
	Length 2.9mm
	Height 1.12mm
	Standards/Approvals Lead (Pb)-free/RoHS
	Automotive Standard No

Datasheet - 2N7002-G

COO (Country of Origin):: TH

The Microchip N-Channel a low-threshold, Enhancement-mode (normally-off) transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Free from Secondary Breakdown

Low Power Drive Requirement

Ease of Paralleling

Microchip 2N7002 Type N-Channel Single MOSFETs, 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-G

訂單超過 $1,300.00 免費送貨

相關連結