JFETs

A JFET is a four-terminal device, the terminals are called the gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs and N-Channel P-Channel. FET stands for junction field-effect transistor. They can also be referred to as a JUGFET

N-Channel JFET Construction

The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

P-Channel JFET Construction

The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

Features and Benefits

  • High input impedance
  • Voltage-controlled device
  • A high degree of isolation between the input and the output
  • Less noise

What are JFET transistors used for?

JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.

What is the difference between a JFET and BJT (Bipolar Junction Transistor)?

The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carriers flow.

What is the doping of semiconductors?

Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.


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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS庫存編號 166-1840
製造零件編號MMBFJ201
TWD3.60
個 (在毎卷:3000)
單位
N 0.3 to 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS庫存編號 761-3688
製造零件編號MMBFJ201
TWD10.30
/個 (每包:25個)
單位
N 0.3 to 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS庫存編號 760-3123
製造零件編號2SK208-R(TE85L,F)
BrandToshiba
TWD14.10
/個 (每包:10個)
單位
N 0.3 to 0.75mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS庫存編號 163-2021
製造零件編號2SK3557-7-TB-E
TWD4.20
個 (在毎卷:3000)
單位
N 16 to 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS庫存編號 170-3357
製造零件編號MMBFJ310LT1G
TWD5.10
個 (在毎卷:3000)
單位
N 24 to 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS庫存編號 122-0136
製造零件編號MMBFJ310LT3G
TWD4.40
個 (在毎卷:10000)
單位
N 24 to 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS庫存編號 163-0964
製造零件編號MMBFJ309LT1G
TWD5.10
個 (在毎卷:3000)
單位
N 12 to 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS庫存編號 792-5164
製造零件編號2SK3557-6-TB-E
TWD11.30
/個 (每包:25個)
單位
N 10 to 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS庫存編號 792-5167
製造零件編號2SK3557-7-TB-E
TWD14.00
/個 (每包:20個)
單位
N 16 to 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS庫存編號 773-7819
製造零件編號MMBFJ309LT1G
TWD16.40
/個 (每包:10個)
單位
N 12 to 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS庫存編號 792-5177
製造零件編號2SK932-24-TB-E
TWD14.20
/個 (每包:25個)
單位
N 14.5 to 24mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS庫存編號 166-2021
製造零件編號J109
TWD5.80
個 (以毎袋:1000)
單位
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS庫存編號 163-2023
製造零件編號2SK932-22-TB-E
TWD6.90
個 (在毎卷:3000)
單位
N 7.3 to 12mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS庫存編號 773-7813
製造零件編號MMBFJ310LT3G
TWD13.40
/個 (每包:10個)
單位
N 24 to 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS庫存編號 626-3314
製造零件編號PMBFJ309,215
BrandNXP
TWD12.20
/個 (每包:10個)
單位
N 12 to 30mA 25 V -25 V -25V Single Single 50 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS庫存編號 864-7846
製造零件編號MMBF4393LT1G
TWD11.50
/個 (每包:50個)
單位
N 5 to 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14pF 14pF 3.04 x 1.4 x 1.01mm
RS庫存編號 163-2019
製造零件編號2SK2394-7-TB-E
TWD7.60
個 (在毎卷:3000)
單位
N 16 to 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS庫存編號 103-8162
製造零件編號PMBFJ177,215
BrandNXP
TWD16.50
個 (在毎卷:3000)
單位
P 1.5 to 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS庫存編號 806-1753
製造零件編號J111
TWD10.70
/個 (每包:50個)
單位
N Min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS庫存編號 738-7607
製造零件編號2N4392CSM
BrandSemelab
TWD2,135.00
單位
N 25 to 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm