JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS庫存編號 166-2669
製造零件編號MMBFJ177
TWD4
個 (在毎卷:3000)
單位
P 1.5 → 20mA - +30 V -30V Single Single 300 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS庫存編號 671-1141
製造零件編號MMBFJ177
TWD11
/個 (每包:5個)
單位
P 1.5 → 20mA - +30 V -30V Single Single 300 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS庫存編號 806-1719
製造零件編號BF256B
TWD9
/個 (每包:50個)
單位
N 6 → 13mA - -30 V 30V Single Single - Through Hole TO-92 3 - - 4.58 x 3.86 x 4.58mm
RS庫存編號 806-1747
製造零件編號J105
TWD20
/個 (每包:10個)
單位
N 500mA - -25 V 25V Single Single 3 Ω Through Hole TO-92 3 160pF 160pF 5.2 x 4.19 x 5.33mm
RS庫存編號 626-3229
製造零件編號PMBF4391,215
BrandNXP
TWD9
/個 (每包:10個)
單位
N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS庫存編號 166-1840
製造零件編號MMBFJ201
TWD3
個 (在毎卷:3000)
單位
N 0.3 → 1.5 - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS庫存編號 626-3263
製造零件編號PMBFJ174,215
BrandNXP
TWD13
/個 (每包:5個)
單位
P 20 → 135mA 30 V +30 V 30V Single Single 85 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS庫存編號 761-3688
製造零件編號MMBFJ201
TWD7
/個 (每包:25個)
單位
N 0.3 → 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS庫存編號 166-2961
製造零件編號J105
TWD9
個 (以毎袋:10000)
單位
N 500mA - -25 V 25V Single Single 3 Ω Through Hole TO-92 3 160pF 160pF 5.2 x 4.19 x 5.33mm
RS庫存編號 760-3123
製造零件編號2SK208-R(TE85L,F)
BrandToshiba
TWD11
/個 (每包:10個)
單位
N 0.3 → 0.75mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS庫存編號 166-0547
製造零件編號PMBF4391,215
BrandNXP
TWD4
個 (在毎卷:3000)
單位
N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS庫存編號 163-2025
製造零件編號2SK932-24-TB-E
TWD5
個 (在毎卷:3000)
單位
N 14.5 → 24mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS庫存編號 112-5510
製造零件編號PMBFJ177,215
BrandNXP
TWD12
/個 (每包:5個)
單位
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS庫存編號 163-2020
製造零件編號2SK3557-6-TB-E
TWD4
個 (在毎卷:3000)
單位
N 10 → 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS庫存編號 625-5723
製造零件編號MMBF4391LT1G
TWD7
/個 (每包:5個)
單位
N 50 → 150mA 30 V +30 V 30V Single Single 30 Ω Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS庫存編號 773-7819
製造零件編號MMBFJ309LT1G
TWD11
/個 (每包:10個)
單位
N 12 → 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS庫存編號 792-5170
製造零件編號2SK932-22-TB-E
TWD6
/個 (每包:25個)
單位
N 7.3 → 12mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS庫存編號 163-0964
製造零件編號MMBFJ309LT1G
TWD4
個 (在毎卷:3000)
單位
N 12 → 30mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS庫存編號 177-5508
製造零件編號2N4392CSM
BrandSemelab
TWD1,851
Each (In a Tray of 100)
單位
N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm
RS庫存編號 760-6030
製造零件編號MMBF5457
TWD6
/個 (每包:50個)
單位
N 1 → 5mA - -25 V 25V Single Single - Surface Mount SOT-23 3 3pF 7pF 2.92 x 1.3 x 0.93mm