JFETs

JFETs
A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.
What does JFET stand for?
JFET stands for junction field-effect transistor
N-Channel JFET Construction
The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
P-Channel JFET Construction
The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.
Features and Benefits
• High input impedance
• Voltage controlled device
• High degree of isolation between the input and the output
• Less noise
What are they also known as?
JUGFET
What are JFET transistors used for?
JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.
What is the difference between a JFET & BJT (Bipolar Junction Transistor)?
The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.
What is doping of semiconductors?
Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS庫存編號 671-1141
製造零件編號MMBFJ177
TWD10.60
/個 (每包:5個)
單位
P 1.5 → 20mA - +30 V -30V Single Single 300 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS庫存編號 761-3688
製造零件編號MMBFJ201
TWD8.80
/個 (每包:25個)
單位
N 0.3 → 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS庫存編號 166-1840
製造零件編號MMBFJ201
TWD3.00
個 (在毎卷:3000)
單位
N 0.3 → 1.5mA - -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS庫存編號 760-3123
製造零件編號2SK208-R(TE85L,F)
BrandToshiba
TWD11.70
/個 (每包:10個)
單位
N 0.3 → 0.75mA 10 V -30 V -50V Single Single - Surface Mount SOT-346 (SC-59) 3 - - 2.9 x 1.5 x 1.1mm
RS庫存編號 626-3229
製造零件編號PMBF4391,215
BrandNXP
TWD11.60
/個 (每包:10個)
單位
N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS庫存編號 166-0547
製造零件編號PMBF4391,215
BrandNXP
TWD3.70
個 (在毎卷:3000)
單位
N 50 → 150mA 40 V -40 V 40V Single Single 30 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS庫存編號 124-1385
製造零件編號J112
TWD3.50
個 (以毎袋:1000)
單位
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS庫存編號 166-2910
製造零件編號J111
TWD2.50
個 (以毎袋:10000)
單位
N Min. 20mA - -35 V 35V Single Single 30 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS庫存編號 103-8162
製造零件編號PMBFJ177,215
BrandNXP
TWD4.20
個 (在毎卷:3000)
單位
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS庫存編號 163-2021
製造零件編號2SK3557-7-TB-E
TWD4.50
個 (在毎卷:3000)
單位
N 16 → 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS庫存編號 792-5164
製造零件編號2SK3557-6-TB-E
TWD11.40
/個 (每包:25個)
單位
N 10 → 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS庫存編號 738-7607
製造零件編號2N4392CSM
BrandSemelab
TWD2,135.00
單位
N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm
RS庫存編號 177-5508
製造零件編號2N4392CSM
BrandSemelab
TWD1,891.60
Each (In a Tray of 100)
單位
N 25 → 75mA 40 V +40 V 40V Single Single 60 Ω Surface Mount SOT-23 3 - - 3.05 x 2.54 x 1.02mm
RS庫存編號 625-5723
製造零件編號MMBF4391LT1G
TWD5.20
/個 (每包:5個)
單位
N 50 → 150mA 30 V +30 V 30V Single Single 30 Ω Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS庫存編號 112-5510
製造零件編號PMBFJ177,215
BrandNXP
TWD12.20
/個 (每包:5個)
單位
P 1.5 → 20mA 30 V +30 V 30V Single Single 300 Ω Surface Mount SOT-23 3 - - 3 x 1.4 x 1mm
RS庫存編號 792-5155
製造零件編號2SK2394-7-TB-E
TWD13.80
/個 (每包:25個)
單位
N 16 → 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS庫存編號 625-5745
製造零件編號MMBFJ310LT1G
TWD15.80
/個 (每包:5個)
單位
N 24 → 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS庫存編號 773-7813
製造零件編號MMBFJ310LT3G
TWD9.40
/個 (每包:10個)
單位
N 24 → 60mA 25 V - - Single Single - Surface Mount SOT-23 3 - 5pF 3.04 x 1.4 x 1.01mm
RS庫存編號 792-5170
製造零件編號2SK932-22-TB-E
TWD12.80
/個 (每包:25個)
單位
N 7.3 → 12mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS庫存編號 170-3357
製造零件編號MMBFJ310LT1G
TWD3.80
個 (在毎卷:3000)
單位
N 24 → 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm