MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS庫存編號 168-7631
製造零件編號STF20N65M5
TWD74.60
毎管:50 個
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N 18 A 710 V 190 mΩ TO-220FP Through Hole 3 -25 V, +25 V Enhancement 5V 3V 30 W Single 1
RS庫存編號 911-4818
製造零件編號SPW20N60S5FKSA1
BrandInfineon
TWD230.90
毎管:30 個
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N 20 A 600 V 190 mΩ TO-247 Through Hole 3 -20 V, +20 V Enhancement 5.5V 3.5V 208 W Single 1
RS庫存編號 354-6414
製造零件編號SPW20N60S5FKSA1
BrandInfineon
TWD319.00
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N 20 A 600 V 190 mΩ TO-247 Through Hole 3 -20 V, +20 V Enhancement 5.5V 3.5V 208 W Single 1
RS庫存編號 920-8742
製造零件編號STW45NM60
TWD329.30
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N 45 A 600 V 110 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement - - 417 W Single 1
RS庫存編號 714-6800
製造零件編號STW45NM60
TWD374.00
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N 45 A 600 V 110 mΩ TO-247 Through Hole 3 -30 V, +30 V Enhancement 5V 3V 417 W Single 1
RS庫存編號 864-8732
製造零件編號FDT1600N10ALZ
TWD16.90
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N 5.6 A 100 V 375 mΩ SOT-223 Surface Mount 3 + Tab -20 V, +20 V Enhancement - 1.4V 10.42 W Single 1
RS庫存編號 783-3087
製造零件編號STF20N65M5
TWD87.80
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N 18 A 710 V 190 mΩ TO-220FP Through Hole 3 -25 V, +25 V Enhancement 5V 3V 30 W Single 1
RS庫存編號 671-4736
製造零件編號BS170
TWD12.40
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N 500 mA 60 V 5 Ω TO-92 Through Hole 3 -20 V, +20 V Enhancement 3V 0.8V 830 mW Single 1
RS庫存編號 166-1753
製造零件編號FQB44N10TM
TWD27.30
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N 43 A 100 V 39 mΩ D2PAK (TO-263) Surface Mount 3 -25 V, +25 V Enhancement - 2V 3.75 W Single 1
RS庫存編號 545-2529
製造零件編號BSS138LT1G
TWD5.80
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N 200 mA 50 V 3.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.5V - 225 mW Single 1
RS庫存編號 671-0841
製造零件編號FDY3000NZ
TWD9.40
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N 600 mA 20 V 700 mΩ SOT-523 (SC-89) Surface Mount 6 -12 V, +12 V Enhancement - 0.6V 625 mW Isolated 2
RS庫存編號 121-6300
製造零件編號2N7002KT1G
TWD1.10
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N 380 mA 60 V 2.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.3V - 420 mW Single 1
RS庫存編號 162-9608
製造零件編號NTD3055-094T4G
TWD8.10
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N 12 A 60 V 94 mΩ DPAK (TO-252) Surface Mount 3 -20 V, +20 V Enhancement 4V - 48 W Single 1
RS庫存編號 541-1225
製造零件編號IRF9540NPBF
BrandInfineon
TWD37.00
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P 23 A 100 V 117 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 140 W Single 1
RS庫存編號 178-4687
製造零件編號BSS138LT3G
TWD1.00
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RS庫存編號 162-9713
製造零件編號C3M0065090J
BrandWolfspeed
TWD337.10
毎管:50 個
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N 35 A 900 V 78 mΩ D2PAK (TO-263) Surface Mount 7 +25 V Enhancement 2.1V 1.8V 113 W Single 1
RS庫存編號 915-8830
製造零件編號C3M0065090J
BrandWolfspeed
TWD331.00
單位
N 35 A 900 V 78 mΩ D2PAK (TO-263) Surface Mount 7 +25 V Enhancement 2.1V 1.8V 113 W Single 1
RS庫存編號 919-4886
製造零件編號IRF9540NPBF
BrandInfineon
TWD30.80
毎管:50 個
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P 23 A 100 V 117 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 140 W Single 1
RS庫存編號 541-1146
製造零件編號IRFBG30PBF
BrandVishay
TWD62.00
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N 3.1 A 1000 V 5 Ω TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 125 W Single 1
RS庫存編號 690-0136
製造零件編號BSS138LT3G
TWD5.10
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N 200 mA 50 V 3.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.5V 0.5V 225 mW Single 1