製造零件編號

ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

RS庫存編號:: 144-2260
製造零件編號:: BSM300D12P2E001
製造商:: ROHM

ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD41,848.00

(不含稅)

TWD43,940.40

訂單超過 $1,300.00 免費送貨

有庫存

加上 2 件從 2026年1月05日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位
1 - 1	TWD41,848.00
2 +	TWD40,802.00

* 參考價格

RS庫存編號:: 144-2260
製造零件編號:: BSM300D12P2E001
製造商:: ROHM

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Product Type	SiC Power Module
	Channel Type	Type N
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	1200V
	Series	BSM
	Mount Type	Surface Mount
	Pin Count	4
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1875W
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Length	152mm
	Height	17mm
	Width	57.95 mm
	Number of Elements per Chip	2

	選取全部
	品牌 ROHM
	Product Type SiC Power Module
	Channel Type Type N
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 1200V
	Series BSM
	Mount Type Surface Mount
	Pin Count 4
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1875W
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Length 152mm
	Height 17mm
	Width 57.95 mm
	Number of Elements per Chip 2

COO (Country of Origin):: JP

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

訂單超過 $1,300.00 免費送貨

SiC Power Modules, ROHM

MOSFET Transistors, ROHM Semiconductor

Note

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