Name: ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001
Brand: ROHM
SKU: 144-2260
Price: 43940.40 TWD
Availability: Discontinued

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透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Channel Type	Type N
	Product Type	SiC Power Module
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	1200V
	Series	BSM
	Mount Type	Surface Mount
	Pin Count	4
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	1875W
	Maximum Operating Temperature	150°C
	Height	17mm
	Width	57.95 mm
	Length	152mm
	Number of Elements per Chip	2

	選取全部
	品牌 ROHM
	Channel Type Type N
	Product Type SiC Power Module
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 1200V
	Series BSM
	Mount Type Surface Mount
	Pin Count 4
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 1875W
	Maximum Operating Temperature 150°C
	Height 17mm
	Width 57.95 mm
	Length 152mm
	Number of Elements per Chip 2

COO (Country of Origin):: JP

SiC Power Modules, ROHM

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor

Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

ROHM BSM 2 Type N-Channel SiC Power Module, 300 A, 1200 V Enhancement, 4-Pin BSM300D12P2E001

SiC Power Modules, ROHM

MOSFET Transistors, ROHM Semiconductor

Note

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