STMicroelectronics A2F SiC Power Module, 75 A, 1200 V Enhancement ACEPACK 2 A2F12M12W2-F1
- RS庫存編號:
- 249-6718
- 製造零件編號:
- A2F12M12W2-F1
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 件）*
TWD9,478.00
(不含稅)
TWD9,951.90
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 |
|---|---|
| 1 - 1 | TWD9,478.00 |
| 2 + | TWD9,193.00 |
* 參考價格
- RS庫存編號:
- 249-6718
- 製造零件編號:
- A2F12M12W2-F1
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | A2F | |
| Package Type | ACEPACK 2 | |
| Mount Type | Chassis | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series A2F | ||
Package Type ACEPACK 2 | ||
Mount Type Chassis | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
Four pack topology
ACEPACK 2 power module
13 mΩ of typical RDS(on) each switch
Insulation voltage UL certified of 2.5 kVrms
Integrated NTC temperature sensor
DBC Cu-Al2O3-Cu based
Press fit contact pins
Excellent switching performance that is virtually independent of temperature
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