製造零件編號

onsemi SiC Power Module, 1200 V F1-2PACK NXH010P120MNF1PTG

RS庫存編號:: 248-5824
製造零件編號:: NXH010P120MNF1PTG
製造商:: onsemi

onsemi SiC Power Module, 1200 V F1-2PACK NXH010P120MNF1PTG

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD4,069.00

(不含稅)

TWD4,272.45

訂單超過 $1,300.00 免費送貨

有庫存

28 件準備從其他地點送貨

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單位	每單位
1 - 1	TWD4,069.00
2 +	TWD3,988.00

* 參考價格

RS庫存編號:: 248-5824
製造零件編號:: NXH010P120MNF1PTG
製造商:: onsemi

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	SiC Power Module
	Maximum Drain Source Voltage Vds	1200V
	Package Type	F1-2PACK
	Mount Type	Through Hole
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	250W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type SiC Power Module
	Maximum Drain Source Voltage Vds 1200V
	Package Type F1-2PACK
	Mount Type Through Hole
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 250W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - NXH010P120MNF1PTG

SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET Press-fit pins, Thermal Interface Material

The ON Semiconductor is a power module containing an 10 mohm/1200 V SiC MOSFET half bridge and a thermistor in an F1 package.

10 mohm/1200 V SiC MOSFET half bridge

Options with pre−applied thermal interface material and without pre−applied TIM

Press−fit pins

onsemi SiC Power Module, 1200 V F1-2PACK NXH010P120MNF1PTG

訂單超過 $1,300.00 免費送貨

SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET Press-fit pins, Thermal Interface Material

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