onsemi SiC Power Module, 1200 V F1-2PACK NXH010P120MNF1PTG

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包裝方式:
RS庫存編號:
248-5824
製造零件編號:
NXH010P120MNF1PTG
製造商:
onsemi
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品牌

onsemi

Product Type

SiC Power Module

Maximum Drain Source Voltage Vds

1200V

Package Type

F1-2PACK

Mount Type

Through Hole

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET Press-fit pins, Thermal Interface Material


The ON Semiconductor is a power module containing an 10 mohm/1200 V SiC MOSFET half bridge and a thermistor in an F1 package.

10 mohm/1200 V SiC MOSFET half bridge

Options with pre−applied thermal interface material and without pre−applied TIM

Press−fit pins

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