STMicroelectronics 3 Phase A2U Type N-Channel SiC Power Module, 75 A, 1200 V Enhancement, 8-Pin ACEPACK 2
- RS庫存編號:
- 249-6719
- 製造零件編號:
- A2U12M12W2-F2
- 製造商:
- STMicroelectronics
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 托盤,共 18 件)*
TWD171,131.40
(不含稅)
TWD179,687.88
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月29日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每托盤* |
|---|---|---|
| 18 - 18 | TWD9,507.30 | TWD171,131.40 |
| 36 + | TWD9,222.10 | TWD165,997.80 |
* 參考價格
- RS庫存編號:
- 249-6719
- 製造零件編號:
- A2U12M12W2-F2
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | ACEPACK 2 | |
| Series | A2U | |
| Mount Type | Chassis | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Typical Gate Charge Qg @ Vgs | 298nC | |
| Forward Voltage Vf | 2.9V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | 3 Phase | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type ACEPACK 2 | ||
Series A2U | ||
Mount Type Chassis | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Typical Gate Charge Qg @ Vgs 298nC | ||
Forward Voltage Vf 2.9V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration 3 Phase | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
3-level topology
ACEPACK 2 power module
13 mΩ of typical RDS(on) each switch
Insulation voltage UL certified of 2.5 kVrms
Integrated NTC temperature sensor
DBC Cu-Al2O3-Cu based
Press fit contact pins
An NTC sensor completes the design
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