STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2 SCT20N120H
- RS庫存編號:
- 201-4416
- 製造零件編號:
- SCT20N120H
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD431.00
(不含稅)
TWD452.55
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月01日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 249 | TWD431.00 |
| 250 - 499 | TWD421.00 |
| 500 + | TWD414.00 |
* 參考價格
- RS庫存編號:
- 201-4416
- 製造零件編號:
- SCT20N120H
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-2 | |
| Series | SiC MOSFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 203mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Height | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-2 | ||
Series SiC MOSFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 203mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Height 10.4mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Low capacitance
相關連結
- STMicroelectronics SiC MOSFET Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK-2
- STMicroelectronics STB37N60 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK
- STMicroelectronics SCTH40N Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics STB37N60 Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK STH12N120K5-2
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3AG
- STMicroelectronics SCTH40N Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK SCTH40N120G2V-7
- STMicroelectronics SCT025H120G3AG Type N-Channel MOSFET 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG