STMicroelectronics STB37N60 Type N-Channel MOSFET, 12 A, 1200 V Enhancement, 3-Pin H2PAK
- RS庫存編號:
- 233-3040
- 製造零件編號:
- STH12N120K5-2
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 卷，共 1000 件）*
TWD320,800.00
(不含稅)
TWD336,840.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,000 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | TWD320.80 | TWD320,800.00 |
| 5000 + | TWD311.10 | TWD311,100.00 |
* 參考價格
- RS庫存編號:
- 233-3040
- 製造零件編號:
- STH12N120K5-2
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK | |
| Series | STB37N60 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 690mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 44.2nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 4.8mm | |
| Width | 15.8 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK | ||
Series STB37N60 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 690mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 44.2nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 4.8mm | ||
Width 15.8 mm | ||
Automotive Standard No | ||
The STMicroelectronics very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
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