STMicroelectronics M2TP80M12W2 8 Type N-Channel MOSFET Arrays, 30 A, 1200 V Enhancement, 32-Pin ACEPACK DMT-32

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RS庫存編號:
640-674
製造零件編號:
M2TP80M12W2-2LA
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET Arrays

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Series

M2TP80M12W2

Package Type

ACEPACK DMT-32

Mount Type

Through Hole

Pin Count

32

Maximum Drain Source Resistance Rds

114mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

63nC

Forward Voltage Vf

1.10V

Maximum Operating Temperature

175°C

Length

44.50mm

Height

5.90mm

Width

27.90 mm

Standards/Approvals

AQG 324

Number of Elements per Chip

8

Automotive Standard

AEC

COO (Country of Origin):
CN
The STMicroelectronics high-efficiency, automotive-grade power module built in the ACEPACK DMT-32 package. It implements a 3-phase four-wire power factor correction (PFC) topology using six second-generation silicon carbide (SiC) MOSFETs and two rectifier diodes. Designed for the PFC stage of on-board chargers (OBCs) in electric and hybrid vehicles, it offers a compact, thermally optimized solution with integrated temperature sensing.

1200 V silicon carbide MOSFETs with typical RDS(on) of 84 mΩ

Implements a 3-phase four-wire power factor correction (PFC) topology

Includes 1200 V / 20 A rectifier diodes

Integrated NTC thermistor for real-time temperature monitoring

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