ROHM Half Bridge BSM Type N-Channel SiC Power Module, 240 A, 1200 V Enhancement, 4-Pin BSM120D12P2C005

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TWD15,692.00

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TWD16,476.60

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  • 2026年6月09日 發貨
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RS庫存編號:
144-2257
製造零件編號:
BSM120D12P2C005
製造商:
ROHM
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品牌

ROHM

Product Type

SiC Power Module

Channel Type

Type N

Maximum Continuous Drain Current Id

240A

Maximum Drain Source Voltage Vds

1200V

Series

BSM

Mount Type

Surface

Pin Count

4

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

150°C

Transistor Configuration

Half Bridge

Height

17mm

Width

45.6 mm

Standards/Approvals

No

Length

122mm

Automotive Standard

No

COO (Country of Origin):
JP

SiC Power Modules, ROHM


The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor


Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

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