ROHM BSM 2 Type N-Channel SiC Power Module Enhancement, 4-Pin BSM180D12P3C007
- RS庫存編號:
- 144-2259
- 製造零件編號:
- BSM180D12P3C007
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD26,453.00
(不含稅)
TWD27,775.65
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月04日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 3 | TWD26,453.00 |
| 4 + | TWD25,884.00 |
* 參考價格
- RS庫存編號:
- 144-2259
- 製造零件編號:
- BSM180D12P3C007
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Series | BSM | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 122mm | |
| Width | 45.6 mm | |
| Height | 17mm | |
| Number of Elements per Chip | 2 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Series BSM | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 122mm | ||
Width 45.6 mm | ||
Height 17mm | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
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