Littelfuse Type N-Channel SiC Power Module, 36 A, 12 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 245-6995
- 製造零件編號:
- IXFA36N60X3
- 製造商:
- Littelfuse
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD7,645.00
(不含稅)
TWD8,027.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 300 件從 2026年1月19日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD152.90 | TWD7,645.00 |
| 100 - 450 | TWD149.20 | TWD7,460.00 |
| 500 - 950 | TWD145.60 | TWD7,280.00 |
| 1000 - 2450 | TWD142.10 | TWD7,105.00 |
| 2500 + | TWD139.30 | TWD6,965.00 |
* 參考價格
- RS庫存編號:
- 245-6995
- 製造零件編號:
- IXFA36N60X3
- 製造商:
- Littelfuse
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Littelfuse | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Littelfuse | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Littelfuse product is a 600V X3 Class Ultra Junction MOSFET available in 36A nominal current rating and TO263 package. These Power MOSFETs feature significantly reduced channel resistance RDSon and gate charge Qg. They feature the lowest figures of merit RDS Qg and RthJC. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFETseries of power MOSFETs feature body diodes which offer low reverse recovery charge and short reverse recovery time.
Low static losses
Well-suited for high frequency applications
Simplified thermal design
High ruggedness against overvoltage
Low gate drive power demand
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