MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


...
顯示內容 隱藏內容

篩選條件

正在檢視 21 - 40,共 10920 項產品
Results per page
Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS庫存編號 124-2289
製造零件編號BSS138BK,215
BrandNexperia
TWD1.60
個 (在毎卷:3000)
單位
N 360 mA 60 V 1.6 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.6V 0.48V 420 mW Single 1
RS庫存編號 752-7773
製造零件編號2N7002H6327XTSA2
BrandInfineon
TWD3.10
/個 (每包:100個)
單位
N 300 mA 60 V 4 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.5V 1.5V 500 mW Single 1
RS庫存編號 124-9035
製造零件編號2N7002H6327XTSA2
BrandInfineon
TWD1.50
個 (在毎卷:3000)
單位
N 300 mA 60 V 4 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.5V 1.5V 500 mW Single 1
RS庫存編號 759-9715
製造零件編號FDT86113LZ
TWD27.80
/個 (每包:5個)
單位
N 3.3 A 100 V 189 mΩ SOT-223 Surface Mount 3 + Tab -20 V, +20 V Enhancement - 1V 2.2 W Single 1
RS庫存編號 166-1838
製造零件編號FDT86113LZ
TWD10.20
個 (在毎卷:4000)
單位
N 3.3 A 100 V 189 mΩ SOT-223 Surface Mount 3 + Tab -20 V, +20 V Enhancement - 1V 2.2 W Single 1
RS庫存編號 792-0894
製造零件編號BSS138BK,215
BrandNexperia
TWD7.10
個 (在毎卷:50)
單位
N 360 mA 60 V 1.6 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.6V 0.48V 420 mW Single 1
RS庫存編號 121-9641
製造零件編號DMP3099L-7
TWD1.80
個 (在毎卷:3000)
單位
P 2.9 A 30 V 99 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.1V - 1.08 W Single 1
RS庫存編號 124-1703
製造零件編號FDN337N
TWD3.50
個 (在毎卷:3000)
單位
N 2.2 A 30 V 65 mΩ SOT-23 Surface Mount 3 -8 V, +8 V Enhancement 1V 0.4V 500 mW Single 1
RS庫存編號 822-2539
製造零件編號DMG2307L-7
TWD4.40
/個 (每包:100個)
單位
P 2 A 30 V 134 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 3V - 1.9 W Single 1
RS庫存編號 827-0503
製造零件編號DMP3099L-7
TWD3.90
/個 (每包:100個)
單位
P 2.9 A 30 V 99 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.1V - 1.08 W Single 1
RS庫存編號 671-0429
製造零件編號FDN337N
TWD11.80
/個 (每包:10個)
單位
N 2.2 A 30 V 65 mΩ SOT-23 Surface Mount 3 -8 V, +8 V Enhancement 1V 0.4V 500 mW Single 1
RS庫存編號 165-2816
製造零件編號SUP57N20-33-E3
BrandVishay
TWD132.30
毎管:50 個
單位
N 57 A 200 V 33 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 3.75 W Single 1
RS庫存編號 822-2649
製造零件編號DMP3160L-7
TWD9.60
/個 (每包:50個)
單位
P 2 A 30 V 190 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.1V - 1.08 W Single 1
RS庫存編號 125-1117
製造零件編號SKM180A020
BrandSemikron
TWD4,754.00
單位
N 180 A 200 V 11 mΩ SEMITRANSM1 Surface Mount 4 -20 V, +20 V Enhancement 4V 2.1V - Single 1
RS庫存編號 121-9599
製造零件編號DMG2307L-7
TWD2.70
個 (在毎卷:3000)
單位
P 2 A 30 V 134 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 3V - 1.9 W Single 1
RS庫存編號 122-2891
製造零件編號DMP3160L-7
TWD3.60
個 (在毎卷:3000)
單位
P 2 A 30 V 190 mΩ SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.1V - 1.08 W Single 1
RS庫存編號 708-5014
製造零件編號SUP57N20-33-E3
BrandVishay
TWD151.00
/個 (每包:5個)
單位
N 57 A 200 V 33 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement - 2V 3.75 W Single 1
RS庫存編號 919-4817
製造零件編號IRF640NPBF
BrandInfineon
TWD30.90
毎管:50 個
單位
N 18 A 200 V 150 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 150 W Single 1
RS庫存編號 166-2305
製造零件編號FDT1600N10ALZ
TWD7.50
個 (在毎卷:4000)
單位
N 5.6 A 100 V 375 mΩ SOT-223 Surface Mount 3 + Tab -20 V, +20 V Enhancement - 1.4V 10.42 W Single 1
RS庫存編號 541-0014
製造零件編號IRF640NPBF
BrandInfineon
TWD49.00
單位
N 18 A 200 V 150 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 150 W Single 1