製造零件編號

Toshiba Type P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T

RS庫存編號:: 236-3569P
製造零件編號:: SSM3J338R,LF(T
製造商:: Toshiba

Toshiba Type P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計 100 件 (按連續帶提供)*

TWD640.00

(不含稅)

TWD672.00

訂單超過 $1,300.00 免費送貨

有庫存

400 件準備從其他地點送貨
加上 12,000 件從 2026年2月05日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位
100 - 200	TWD6.40
250 - 450	TWD6.20
500 - 950	TWD6.10
1000 +	TWD5.90

* 參考價格

RS庫存編號:: 236-3569P
製造零件編號:: SSM3J338R,LF(T
製造商:: Toshiba

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	12V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	26.3mΩ
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.75V
	Typical Gate Charge Qg @ Vgs	19.5nC
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	10 V
	Maximum Operating Temperature	150°C
	Width	2.9 mm
	Standards/Approvals	No
	Height	0.8mm
	Length	2.4mm
	Automotive Standard	No

	選取全部
	品牌 Toshiba
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 12V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 26.3mΩ
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.75V
	Typical Gate Charge Qg @ Vgs 19.5nC
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 10 V
	Maximum Operating Temperature 150°C
	Width 2.9 mm
	Standards/Approvals No
	Height 0.8mm
	Length 2.4mm
	Automotive Standard No

Datasheet - SSM3J338R,LF(T

The Toshiba field effect transistor MADE up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C