Infineon AUIRFS Type N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-252 AUIRLR3410TRL
- RS庫存編號:
- 244-2883
- 製造零件編號:
- AUIRLR3410TRL
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD145.00
(不含稅)
TWD152.24
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,444 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD72.50 | TWD145.00 |
| 10 - 98 | TWD71.00 | TWD142.00 |
| 100 - 248 | TWD69.00 | TWD138.00 |
| 250 - 498 | TWD67.00 | TWD134.00 |
| 500 + | TWD65.50 | TWD131.00 |
* 參考價格
- RS庫存編號:
- 244-2883
- 製造零件編號:
- AUIRLR3410TRL
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | AUIRFS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series AUIRFS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRLR3410TRL specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
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