Infineon AUIRFS Type N-Channel MOSFET, 59 A, 55 V, 3-Pin TO-252 AUIRFR2905ZTRL
- RS庫存編號:
- 244-2875
- 製造零件編號:
- AUIRFR2905ZTRL
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD134.00
(不含稅)
TWD140.70
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 1,266 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD67.00 | TWD134.00 |
| 10 - 98 | TWD66.00 | TWD132.00 |
| 100 - 248 | TWD65.00 | TWD130.00 |
| 250 - 498 | TWD62.00 | TWD124.00 |
| 500 + | TWD61.00 | TWD122.00 |
* 參考價格
- RS庫存編號:
- 244-2875
- 製造零件編號:
- AUIRFR2905ZTRL
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | AUIRFS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series AUIRFS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRFR2905ZTRL specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficientand reliable device for use in Automotive applications and a widevariety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
相關連結
- Infineon AUIRFS Type N-Channel MOSFET 55 V, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRFR2905ZTRPBF
- Infineon AUIRFS Type N-Channel MOSFET 100 V, 3-Pin TO-252
- Infineon AUIRFS Type N-Channel MOSFET 200 V, 3-Pin TO-252
- Infineon AUIRFS Type N-Channel MOSFET 60 V, 3-Pin TO-252
- Infineon AUIRFS Type N-Channel MOSFET 100 V, 3-Pin TO-252 AUIRFR540ZTRL
- Infineon AUIRFS Type N-Channel MOSFET 100 V, 3-Pin TO-252 AUIRLR3410TRL