Microchip VN2406 Type N-Channel MOSFET, 1 A, 240 V MOSFET, 3-Pin TO-92 VN2406L-G
- RS庫存編號:
- 264-8945
- 製造零件編號:
- VN2406L-G
- 製造商:
- Microchip
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可享批量折扣
小計(1 包,共 5 件)*
TWD299.00
(不含稅)
TWD313.95
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 840 件從 2026年1月05日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD59.80 | TWD299.00 |
| 50 - 95 | TWD58.60 | TWD293.00 |
| 100 - 245 | TWD37.20 | TWD186.00 |
| 250 - 495 | TWD36.00 | TWD180.00 |
| 500 + | TWD35.40 | TWD177.00 |
* 參考價格
- RS庫存編號:
- 264-8945
- 製造零件編號:
- VN2406L-G
- 製造商:
- Microchip
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | TO-92 | |
| Series | VN2406 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | MOSFET | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type TO-92 | ||
Series VN2406 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode MOSFET | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
相關連結
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