製造零件編號

Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays, 2.8 A, 240 V Enhancement, 8-Pin SOIC TD9944TG-G

RS庫存編號:: 598-332
製造零件編號:: TD9944TG-G
製造商:: Microchip

Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays, 2.8 A, 240 V Enhancement, 8-Pin SOIC TD9944TG-G

小計（1 卷，共 3300 件）*

TWD206,910.00

(不含稅)

TWD217,272.00

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下方訂單 TWD1,300.00（不含稅）成本 TWD500.00。

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從 2026年4月13日發貨

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單位	每單位	每卷*
3300 +	TWD62.70	TWD206,910.00

* 參考價格

RS庫存編號:: 598-332
製造零件編號:: TD9944TG-G
製造商:: Microchip

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選取全部	屬性	值
	品牌	Microchip
	Channel Type	Dual N
	Product Type	MOSFET Arrays
	Maximum Continuous Drain Current Id	2.8A
	Maximum Drain Source Voltage Vds	240V
	Series	TD9944
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.8V
	Maximum Gate Source Voltage Vgs	±20 V
	Transistor Configuration	Dual N Channel
	Maximum Operating Temperature	150°C
	Height	1.75mm
	Length	4.9mm
	Standards/Approvals	RoHS Certificate of Compliance
	Width	3.9 mm
	Number of Elements per Chip	1
	Automotive Standard	No

	選取全部
	品牌 Microchip
	Channel Type Dual N
	Product Type MOSFET Arrays
	Maximum Continuous Drain Current Id 2.8A
	Maximum Drain Source Voltage Vds 240V
	Series TD9944
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.8V
	Maximum Gate Source Voltage Vgs ±20 V
	Transistor Configuration Dual N Channel
	Maximum Operating Temperature 150°C
	Height 1.75mm
	Length 4.9mm
	Standards/Approvals RoHS Certificate of Compliance
	Width 3.9 mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet - TD9944TG-G

The Microchip Dual N-Channel enhancement-mode vertical MOSFETs use Supertex’s well-proven silicon-gate manufacturing process. This combination offers power handling capabilities similar to those of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even in demanding environments.

High input impedance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays, 2.8 A, 240 V Enhancement, 8-Pin SOIC TD9944TG-G

添加 3300 件 件可免費送貨

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添加 3300 件件可免費送貨