Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays, 20 A, 60 V Enhancement, 8-Pin TDSON IPG20N06S4L26AATMA1
- RS庫存編號:
- 223-8523
- 製造零件編號:
- IPG20N06S4L26AATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 15 件）*
TWD439.50
(不含稅)
TWD461.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 24,825 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 15 | TWD29.30 | TWD439.50 |
| 30 - 75 | TWD28.60 | TWD429.00 |
| 90 - 225 | TWD27.90 | TWD418.50 |
| 240 - 465 | TWD27.20 | TWD408.00 |
| 480 + | TWD25.20 | TWD378.00 |
* 參考價格
- RS庫存編號:
- 223-8523
- 製造零件編號:
- IPG20N06S4L26AATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 33W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 33W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Height 1mm | ||
Width 5.9 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 60 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
相關連結
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays 60 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS Type N-Channel MOSFET 55 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS Type N-Channel MOSFET 55 V Enhancement, 8-Pin TDSON IPG20N06S2L35AATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON BSC097N06NSATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON