Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP
- RS庫存編號:
- 214-4334
- 製造零件編號:
- BSL308CH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD24,300.00
(不含稅)
TWD25,500.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 9,000 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD8.10 | TWD24,300.00 |
| 15000 + | TWD7.90 | TWD23,700.00 |
* 參考價格
- RS庫存編號:
- 214-4334
- 製造零件編號:
- BSL308CH6327XTSA1
- 製造商:
- Infineon
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET Arrays | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 57mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.6W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | -5nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET Arrays | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 57mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.6W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs -5nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET Arrays, 30V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSL308CH6327XTSA1
This MOSFET array device provides paired P‑channel and N‑channel transistors in a compact surface‑mount package for switching and power-management roles in automotive and industrial electronics. It is supplied in a TSOP 6‑pin format designed for board‑level integration and operation across a wide ambient range, supporting typical gate-charge behaviour suited to rapid switching tasks.
Features and Benefits:
• Low Rds(on) 57mΩ reduces conduction losses and heat generation
• Maximum continuous drain current 2.3A enables moderate load handling
• Maximum Vds 30V supports 30V system architectures
• Maximum gate‑source voltage 20V protects gate integrity under transients
• Forward voltage 1.1V improves efficiency in diode conduction paths
• Rated to 150°C allows reliable operation at elevated junction temperatures
• Maximum continuous drain current 2.3A enables moderate load handling
• Maximum Vds 30V supports 30V system architectures
• Maximum gate‑source voltage 20V protects gate integrity under transients
• Forward voltage 1.1V improves efficiency in diode conduction paths
• Rated to 150°C allows reliable operation at elevated junction temperatures
Applications
• Suitable for automotive body control modules requiring AEC compliance
• Ideal for high‑density DC-DC converter switch stages
• Used with battery management circuits in vehicles and equipment
• Can be used for motor driver low‑side or high‑side switching
• Suitable for compact power distribution on surface‑mount PCBs
• Ideal for high‑density DC-DC converter switch stages
• Used with battery management circuits in vehicles and equipment
• Can be used for motor driver low‑side or high‑side switching
• Suitable for compact power distribution on surface‑mount PCBs
What mounting type is required for board assembly?
It is a surface‑mount device in a TSOP 6‑pin package intended for reflow soldering to standard PCB land patterns.
How does it behave across temperature extremes?
The device is specified to operate from -55°C up to a maximum of 150°C, allowing use in harsh thermal environments.
Are there separate transistor elements per chip?
There is one element per chip configured as a dual transistor arrangement delivering both P‑ and N‑channel functions.
What standards and material compliance are indicated?
The component is RoHS‑compliant and manufactured using materials conformant with IEC 61249‑2‑21.
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