Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP
- RS庫存編號:
- 214-4334
- 製造零件編號:
- BSL308CH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD20,400.00
(不含稅)
TWD21,420.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 9,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD6.80 | TWD20,400.00 |
| 15000 + | TWD6.70 | TWD20,100.00 |
* 參考價格
- RS庫存編號:
- 214-4334
- 製造零件編號:
- BSL308CH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET Arrays | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 57mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | -5nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 2.9mm | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Width | 1.6 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET Arrays | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 57mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs -5nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 2.9mm | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Width 1.6 mm | ||
Height 1mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
This Infineon OptimOS P3 + OptiMOS 2 MOSFET- an n-channel and a p-channel power MOSFET within the same package-is high efficiency solution for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). It is Avalanche rated
It is 100% lead-free and RoHS compliant
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