Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin TSOP BSL215CH6327XTSA1
- RS庫存編號:
- 110-7726
- Distrelec 貨號:
- 304-36-974
- 製造零件編號:
- BSL215CH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 組，共 60 件）*
TWD1,218.00
(不含稅)
TWD1,279.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 17,520 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 60 - 720 | TWD20.30 | TWD1,218.00 |
| 780 - 1440 | TWD19.80 | TWD1,188.00 |
| 1500 + | TWD18.50 | TWD1,110.00 |
* 參考價格
- RS庫存編號:
- 110-7726
- Distrelec 貨號:
- 304-36-974
- 製造零件編號:
- BSL215CH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSL215CH6327XTSA1
This MOSFET is a compact surface-mounted power transistor device designed for switching and amplification in automotive and industrial contexts. It comprises paired transistor elements in an isolated configuration to support complementary applications where both P‑channel and N‑channel operation is required. The component is tailored for use on printed circuit boards where a small footprint and industry-specific reliability are important.
Features and Benefits:
• Low gate charge of 3 nC enables faster switching performance
• Maximum continuous drain current of 1.5A supports moderate-load circuits
• Drain-source resistance of 280 mΩ reduces conduction losses
• Rated for 20V drain-source voltage for low-voltage systems
• Power dissipation of 500 mW manages thermal load in compact designs
• Qualified to AEC‑Q101 for elevated automotive stress tolerance
• Maximum continuous drain current of 1.5A supports moderate-load circuits
• Drain-source resistance of 280 mΩ reduces conduction losses
• Rated for 20V drain-source voltage for low-voltage systems
• Power dissipation of 500 mW manages thermal load in compact designs
• Qualified to AEC‑Q101 for elevated automotive stress tolerance
Applications
• Suitable for automotive signal switching and control circuits
• Used with battery management and power-distribution modules
• Ideal for compact DC‑DC converters and voltage regulators
• Can be used for load switching in infotainment subsystems
• Appropriate for embedded motor-control driver stages
• Used with battery management and power-distribution modules
• Ideal for compact DC‑DC converters and voltage regulators
• Can be used for load switching in infotainment subsystems
• Appropriate for embedded motor-control driver stages
What temperature range can it operate within reliably?
It functions across -55 °C to 150 °C, enabling use from cold starts to high under‑bonnet temperatures.
How many transistor elements are provided on the chip?
The device contains two elements per chip arranged in an isolated configuration for flexible circuit topologies.
What package and pin count should designers plan for?
It is supplied in a TSOP package with six pins for surface mounting and layout planning.
Which gate‑source and forward voltage limits must be observed?
The maximum gate‑source voltage is 12V and the forward voltage is 0.8V for diode conduction considerations.
相關連結
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