Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin TSOP BSL215CH6327XTSA1

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包裝方式:
RS庫存編號:
110-7726
製造零件編號:
BSL215CH6327XTSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

20V

Series

OptiMOS

Package Type

TSOP

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

500mW

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Height

1mm

Standards/Approvals

No

Width

1.6 mm

Length

2.9mm

Number of Elements per Chip

2

Distrelec Product Id

304-36-974

Automotive Standard

AEC-Q101

Infineon OptiMOS™ Dual Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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