Infineon Isolated OptiMOS™ 2 Type N, Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 6-Pin TSOP-6 BSL316CH6327XTSA1
- RS庫存編號:
- 166-1082
- 製造零件編號:
- BSL316CH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD18,900.00
(不含稅)
TWD19,860.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 30,000 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD6.30 | TWD18,900.00 |
| 15000 + | TWD6.20 | TWD18,600.00 |
* 參考價格
- RS庫存編號:
- 166-1082
- 製造零件編號:
- BSL316CH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS™ | |
| Package Type | TSOP-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.86V | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 2.9mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS™ | ||
Package Type TSOP-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.86V | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 2.9mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS™ Series MOSFET, 30V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSL316CH6327XTSA1
This MOSFET provides compact, surface-mount switching for low-voltage applications in automotive and industrial contexts. It is an isolated dual-channel transistor designed for enhancement-mode operation, offering both N- and P-channel elements in a 6-pin TSOP package. The device supports typical gate-charge behaviour suited to fast switching and operates across a wide temperature span required by harsh environments.
Features and Benefits:
• 30V drain voltage enables low-voltage system switching
• 280mΩ drain-source resistance reduces conduction losses
• 2.4nC typical gate charge for efficient gate drive
• 1.5A continuous drain current for moderate current loads
• 500mW power dissipation prevents overheating in compact layouts
• AEC‑Q101 qualification ensures suitability for automotive use
• 280mΩ drain-source resistance reduces conduction losses
• 2.4nC typical gate charge for efficient gate drive
• 1.5A continuous drain current for moderate current loads
• 500mW power dissipation prevents overheating in compact layouts
• AEC‑Q101 qualification ensures suitability for automotive use
Applications
• Suitable for DC load switching in vehicle electronics
• Used for complementary push‑pull driver stages
• Ideal for SMD power management on control boards
• Can be used for battery protection and load disconnects
• Appropriate for temperature‑sensitive automotive modules
• Used for complementary push‑pull driver stages
• Ideal for SMD power management on control boards
• Can be used for battery protection and load disconnects
• Appropriate for temperature‑sensitive automotive modules
What pin count and package type does it use?
The component comes in a 6-pin TSOP‑6 surface-mount package optimised for compact assemblies.
How does it perform across temperatures?
It is rated to operate from -55°C up to 150°C, maintaining functionality in extreme ambient conditions.
Is the device single- or multi-element?
The die contains two isolated elements, providing both N- and P-channel configurations on a single chip.
What gate voltage limits must be observed?
Gate-to-source voltage must not exceed 20V to prevent damage to the gate insulation.
相關連結
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