Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1

RS庫存編號:: 827-0002
製造零件編號:: 2N7002DWH6327XTSA1
製造商:: Infineon

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

單價（不含稅）個 (在毎卷：500)

TWD3.30

(不含稅)

TWD3.46

15000 現貨庫存，可於6工作日發貨。*

* 交貨日期可能會根據您選擇的數量和交貨地址而變更。

單位	每單位	每卷**
500 - 500	TWD3.30	TWD1,650.00
1000 - 1000	TWD3.20	TWD1,600.00
1500 +	TWD3.00	TWD1,500.00

** 參考價格

RS庫存編號:: 827-0002
製造零件編號:: 2N7002DWH6327XTSA1
製造商:: Infineon

2N7002DW OptiMOS Small-Signal-Transistor Datasheet
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	300 mA
Maximum Drain Source Voltage	60 V
Package Type	SOT-363
Series	OptiMOS™
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	500 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	2mm
Typical Gate Charge @ Vgs	0.4 nC @ 10 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Width	1.25mm
Minimum Operating Temperature	-55 °C
Height	0.8mm

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1

Infineon OptiMOS™ Dual Power MOSFET