Infineon Dual OptiMOS 2 N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin TDSON IPG20N06S4L26AATMA1
- RS庫存編號:
- 223-8521
- 製造零件編號:
- IPG20N06S4L26AATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 5000 件）*
TWD97,000.00
(不含稅)
TWD101,850.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月13日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD19.40 | TWD97,000.00 |
| 10000 + | TWD18.80 | TWD94,000.00 |
* 參考價格
- RS庫存編號:
- 223-8521
- 製造零件編號:
- IPG20N06S4L26AATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Width | 5.9mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Width 5.9mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 20A Maximum Continuous Drain Current - IPG20N06S4L26AATMA1
This MOSFET is a dual N-channel surface-mount transistor designed for power switching and control in demanding environments. It combines low conduction losses with modest gate drive requirements to support high-current applications in automotive and industrial systems where temperature tolerance and Compact packaging are important.
Features and Benefits:
• 60V drain rating enables medium-voltage switching applications
• 20A continuous drain current supports substantial load currents
• 26mΩ Rds(on) reduces conduction losses during operation
• 15nC typical gate charge minimises gate-drive energy
• 33W maximum power dissipation allows significant heat handling
• 16V maximum gate-source protection preserves gate integrity
• 20A continuous drain current supports substantial load currents
• 26mΩ Rds(on) reduces conduction losses during operation
• 15nC typical gate charge minimises gate-drive energy
• 33W maximum power dissipation allows significant heat handling
• 16V maximum gate-source protection preserves gate integrity
Applications
• Suitable for automotive power stages requiring AEC-Q101 qualification
• Used for DC-DC converters in vehicular systems
• Ideal for motor-drive half-bridge circuits on Compact boards
• Can be used for high-current load switching in industrial control
• Used with thermal management designs for elevated operating temperatures
• Used for DC-DC converters in vehicular systems
• Ideal for motor-drive half-bridge circuits on Compact boards
• Can be used for high-current load switching in industrial control
• Used with thermal management designs for elevated operating temperatures
What package type is used for Compact PCB implementation?
It is supplied in an 8-pin TDSON package suited to surface mounting.
How well does it cope with elevated ambient temperatures?
The device is rated to operate up to 175°C maximum operating temperature.
What protection limits exist for the gate electrode?
Gate excursions are limited by a 16V maximum gate-source voltage.
How many transistor elements are present per chip?
There are two elements per chip in the dual configuration.
What environmental or materials standard does it meet?
The component has RoHS approval for restricted-substance compliance.
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