ROHM RD3G08DBKHRB Type N-Channel Single MOSFETs, 40 V Enhancement, 3-Pin TO-252 (TL) RD3G08DBKHRBTL
- RS庫存編號:
- 687-464
- 製造零件編號:
- RD3G08DBKHRBTL
- 製造商:
- ROHM
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 2 件）*
TWD71.00
(不含稅)
TWD74.56
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年1月26日 發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD35.50 | TWD71.00 |
| 20 - 48 | TWD31.00 | TWD62.00 |
| 50 - 198 | TWD28.00 | TWD56.00 |
| 200 - 998 | TWD22.50 | TWD45.00 |
| 1000 + | TWD22.00 | TWD44.00 |
* 參考價格
- RS庫存編號:
- 687-464
- 製造零件編號:
- RD3G08DBKHRBTL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 (TL) | |
| Series | RD3G08DBKHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.50mm | |
| Width | 6.8 mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 (TL) | ||
Series RD3G08DBKHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.50mm | ||
Width 6.8 mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET is engineered for high-performance applications demanding superior efficiency and high current capacity. Designed to operate at 40V with a maximum continuous drain current of 80A, this MOSFET delivers exceptional reliability and performance under various operating conditions. Furthermore, its low on-resistance of 4.1mΩ minimises energy losses, ensuring optimal thermal performance and power dissipation up to 76W, making it an ideal choice for demanding applications in automotive and industrial sectors.
Low on resistance for reduced energy losses during operation
High continuous drain current capability of 80A for robust performance
Power dissipation rating of 76W for reliable operation in high-power applications
Avalanche current rating of 30A, ensuring durability during transient conditions
AEC Q101 qualification for reliability in automotive applications
RoHS compliant with Pb free plating, aligning with environmental standards
Includes packaging specifications like embossed tape for efficient handling
Multiple voltage ratings to cater to diverse circuit designs
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