ROHM AG091FLD3HRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) AG091FLD3HRBTL

N

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小計(1 組,共 2 件)*

TWD72.00

(不含稅)

TWD75.60

(含稅)

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2 - 18TWD36.00TWD72.00
20 - 48TWD31.50TWD63.00
50 - 198TWD28.50TWD57.00
200 - 998TWD23.00TWD46.00
1000 +TWD22.50TWD45.00

* 參考價格

包裝方式:
RS庫存編號:
687-462
製造零件編號:
AG091FLD3HRBTL
製造商:
ROHM
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品牌

ROHM

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Drain Source Voltage Vds

60V

Series

AG091FLD3HRB

Package Type

TO-252 (TL)

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Maximum Power Dissipation Pd

76W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

2.3mm

Length

10.50mm

Standards/Approvals

AEC-Q101, RoHS

Width

6.80 mm

Automotive Standard

AEC-Q101

The ROHM N channel Power MOSFET designed for automotive applications, providing exceptional efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current capacity of 80A, this MOSFET ensures optimal performance in demanding environments. Its low on-resistance of 7.5mΩ significantly reduces power losses, making it suitable for various automotive systems and high-current applications. The device is RoHS compliant with Pb-free plating, ensuring environmental safety while maintaining robust performance under stringent conditions.

Low on resistance for improved efficiency and reduced heat generation

AEC Q101 qualified, ensuring high reliability in automotive applications

100% avalanche tested for enhanced safety and durability

Wide operating junction temperature range from -55 to +175 °C for versatile use

Robust power dissipation capacity of 76W to handle significant loads

Tape packaging facilitates ease of handling and assembly in manufacturing environments

Embossed packaging specifications ensure secure dynamics during transport

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