ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08BBJHRBTL
- RS庫存編號:
- 687-358
- 製造零件編號:
- RD3L08BBJHRBTL
- 製造商:
- ROHM
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小計（1 組，共 2 件）*
TWD128.00
(不含稅)
TWD134.40
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD64.00 | TWD128.00 |
| 20 - 48 | TWD56.00 | TWD112.00 |
| 50 - 198 | TWD50.50 | TWD101.00 |
| 200 - 998 | TWD40.50 | TWD81.00 |
| 1000 + | TWD39.50 | TWD79.00 |
* 參考價格
- RS庫存編號:
- 687-358
- 製造零件編號:
- RD3L08BBJHRBTL
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L08BBJHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Power Dissipation Pd | 142W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Width | 6.8 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L08BBJHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Power Dissipation Pd 142W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Height 2.3mm | ||
Length 10.50mm | ||
Width 6.8 mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel MOSFET designed for demanding applications requiring robust power management. With a maximum voltage rating of -60V and current capability of ±80A, this device is suitable for automotive and industrial use. Constructed in a TO-252 package, it ensures efficient thermal performance with a power dissipation of up to 142W. The low on-resistance of 10.7mΩ enhances power efficiency, making it an ideal choice for energy-conscious designs. Additionally, it is 100% avalanche tested and AEC-Q101 qualified, ensuring reliability in critical applications.
Optimized for efficiency with low on-state resistance, ensuring reduced power loss
Robust thermal performance allows operation in demanding environments with a maximum junction temperature of 175°C
Suitable for high-current applications with a continuous drain current capability of ±80A
AEC Q101 qualified for automotive applications, ensuring compliance with rigorous quality standards
Embossed tape packaging facilitates automated assembly processes
Fully avalanche rated, guaranteeing reliable operation under transient conditions
Pb free plating and RoHS compliant, meeting environmental standards for modern electronic components
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