ROHM RD3P08BBLHRB Type P-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) RD3P08BBLHRBTL
- RS庫存編號:
- 687-355
- 製造零件編號:
- RD3P08BBLHRBTL
- 製造商:
- ROHM
N
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可享批量折扣
小計（1 組，共 2 件）*
TWD143.00
(不含稅)
TWD150.16
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 100 件準備從其他地點送貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD71.50 | TWD143.00 |
| 20 - 98 | TWD63.00 | TWD126.00 |
| 100 - 198 | TWD56.50 | TWD113.00 |
| 200 + | TWD44.50 | TWD89.00 |
* 參考價格
- RS庫存編號:
- 687-355
- 製造零件編號:
- RD3P08BBLHRBTL
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RD3P08BBLHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 142W | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 6.8 mm | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RD3P08BBLHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 142W | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 6.8 mm | ||
Height 2.3mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for robust applications requiring efficient switching. With a maximum voltage rating of 100V and a continuous drain current of 80A, this component delivers reliable power management. Its low on-resistance of just 6.2mΩ ensures minimal energy loss during operation, which is critical for enhancing the efficiency of power supplies. Supporting a wide range of commutated current applications, this MOSFET is AEC-Q101 qualified, making it suitable for automotive environments. Its compact DPAK package allows for improved thermal performance in confined spaces.
Low on resistance enhances energy efficiency, reducing heat generation
100V drain-source voltage rating supports diverse high-voltage applications
Continuous drain current of 80A allows for dependable performance under heavy loads
AEC Q101 qualified, assuring high reliability for automotive applications
Compact TO-252 package facilitates better thermal management and space-saving designs
Robust avalanche capability ensures safety during transient conditions
High power dissipation of 142W accommodates demanding operational needs
Pb free plating and RoHS compliant, aligning with environmentally friendly practices
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