ROHM RD3E07BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E07BBJHRBTL
- RS庫存編號:
- 687-470
- 製造零件編號:
- RD3E07BBJHRBTL
- 製造商:
- ROHM
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可享批量折扣
小計（1 組，共 2 件）*
TWD67.00
(不含稅)
TWD70.36
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 100 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD33.50 | TWD67.00 |
| 20 - 48 | TWD29.50 | TWD59.00 |
| 50 - 198 | TWD26.50 | TWD53.00 |
| 200 - 998 | TWD21.50 | TWD43.00 |
| 1000 + | TWD21.00 | TWD42.00 |
* 參考價格
- RS庫存編號:
- 687-470
- 製造零件編號:
- RD3E07BBJHRBTL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TO-252 (TL) | |
| Series | RD3E07BBJHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Power Dissipation Pd | 77W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.50mm | |
| Height | 2.3mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 6.8 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TO-252 (TL) | ||
Series RD3E07BBJHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Power Dissipation Pd 77W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.50mm | ||
Height 2.3mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 6.8 mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel power MOSFET designed for high performance in demanding applications. With a maximum continuous drain current of ±78A and a breakdown voltage of -30V, this MOSFET is ideal for use in automotive and industrial environments requiring robust efficiency. Its compact DPAK package enables easy integration into various designs, while its low on-resistance of 8.5mΩ significantly reduces energy loss. The product is also AEC-Q101 qualified, ensuring reliability in harsh conditions, making it a perfect choice for designers seeking high-quality and durable components for their electronic applications.
Features low on resistance for improved efficiency and reduced heat generation
Offers a maximum power dissipation of 77W for high power applications
Designed to withstand a wide operating temperature range of -55 to +175°C
AEC Q101 qualified, ensuring high reliability for automotive applications
Provides 100% avalanche testing for enhanced durability under stress
Complies with Pb free and RoHS standards for environmentally friendly use
Packaged in a DPAK format for easy mounting and integration
Supports a pulsed drain current capability of ±156A for dynamic load conditions.
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