ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL
- RS庫存編號:
- 687-362
- 製造零件編號:
- RD3E08BBJHRBTL
- 製造商:
- ROHM
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可享批量折扣
小計（1 組，共 2 件）*
TWD120.00
(不含稅)
TWD126.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 100 件準備從其他地點送貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD60.00 | TWD120.00 |
| 20 - 48 | TWD52.50 | TWD105.00 |
| 50 - 198 | TWD47.50 | TWD95.00 |
| 200 - 998 | TWD38.00 | TWD76.00 |
| 1000 + | TWD37.50 | TWD75.00 |
* 參考價格
- RS庫存編號:
- 687-362
- 製造零件編號:
- RD3E08BBJHRBTL
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TO-252 (TL) | |
| Series | RD3E08BBJHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Power Dissipation Pd | 142W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Width | 6.8 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TO-252 (TL) | ||
Series RD3E08BBJHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Power Dissipation Pd 142W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Length 10.50mm | ||
Width 6.8 mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET designed for demanding applications requiring low on-resistance and high current handling capabilities. This robust device operates at a maximum drain-source voltage of -30V and a continuous drain current of ±80A, ensuring efficient performance in power management systems. Its innovative construction includes a thermal resistance of just 1.05 °C/W, optimising reliability and facilitating effective heat dissipation. With AEC-Q101 qualification, this MOSFET is suitable for automotive applications, thriving in environments prone to extreme temperature variations and ensuring dependable operation under challenging conditions.
Delivers low on resistance of 3.7 mΩ, enhancing efficiency and minimising energy loss
Pulsed drain current capability of ±160A, accommodating high-demand applications
Gate-source voltage ratings of +5/-20V ensure versatile operation and robust control
Assemblable in a DPAK package for efficient thermal management and compact footprint
Avalanche tested for improved reliability in high-stress electrical environments
AEC Q101 qualified, making it ideal for safety-critical automotive applications.
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