ROHM AG501EGD3HRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) AG501EGD3HRBTL
- RS庫存編號:
- 687-359
- 製造零件編號:
- AG501EGD3HRBTL
- 製造商:
- ROHM
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小計（1 組，共 2 件）*
TWD126.00
(不含稅)
TWD132.30
(含稅)
訂單超過 $1,300.00 免費送貨
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- 100 件準備從其他地點送貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD63.00 | TWD126.00 |
| 20 - 48 | TWD55.50 | TWD111.00 |
| 50 - 198 | TWD49.50 | TWD99.00 |
| 200 - 998 | TWD40.00 | TWD80.00 |
| 1000 + | TWD39.00 | TWD78.00 |
* 參考價格
- RS庫存編號:
- 687-359
- 製造零件編號:
- AG501EGD3HRBTL
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | AG501EGD3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 142W | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.50mm | |
| Width | 6.80 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds -40V | ||
Series AG501EGD3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 142W | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.50mm | ||
Width 6.80 mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel power MOSFET designed for efficient energy management in automotive systems and various applications. Featuring a maximum Drain-Source voltage of -40V and a continuous drain current capability of up to -80A, this robust device delivers exceptional reliability under demanding operating conditions. With a low on-resistance of just 4.9mΩ, it ensures minimal energy loss, contributing to improved overall system efficiency and thermal performance. This MOSFET is also AEC-Q101 qualified, highlighting its suitability for automotive applications where stringent standards must be met.
Offers low on resistance for reduced power loss and enhanced efficiency
AEC Q101 qualified, ensuring reliability for automotive and critical applications
Avalanche tested to guarantee performance under dynamic conditions
Supports a maximum power dissipation of 142W, compatible with high-performance designs
Wide operating temperature range from -55°C to 175°C, allowing use in diverse environments
Pb free plating and RoHS compliant, meeting modern environmental standards
Optimised packaging specifications, including embedding options for automated assembly
Provides a guaranteed avalanche energy rating, ensuring robust operation during transient events
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