ROHM AG502EED3HRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) AG502EED3HRBTL
- RS庫存編號:
- 687-467
- 製造零件編號:
- AG502EED3HRBTL
- 製造商:
- ROHM
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可享批量折扣
小計（1 組，共 2 件）*
TWD70.00
(不含稅)
TWD73.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 100 件準備從其他地點送貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD35.00 | TWD70.00 |
| 20 - 48 | TWD31.00 | TWD62.00 |
| 50 - 198 | TWD27.50 | TWD55.00 |
| 200 - 998 | TWD22.50 | TWD45.00 |
| 1000 + | TWD21.50 | TWD43.00 |
* 參考價格
- RS庫存編號:
- 687-467
- 製造零件編號:
- AG502EED3HRBTL
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | AG502EED3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Power Dissipation Pd | 77W | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 6.80 mm | |
| Length | 10.50mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -30V | ||
Series AG502EED3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Power Dissipation Pd 77W | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 6.80 mm | ||
Length 10.50mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET designed for efficient and reliable energy management in automotive systems. Featuring a maximum drain-source voltage of -30V and continuous drain current capability of up to 78A, this device is ideal for demanding applications requiring robust power handling. Its low on-resistance of 8.5mΩ minimises power loss, contributing to enhanced thermal efficiency. Additionally, the MOSFET is qualified under AEC-Q101 standards, ensuring it meets rigorous automotive requirements for durability and performance. With excellent avalanche characteristics and a wide operational temperature range, the AG502EED3HRB ensures consistent performance under diverse conditions.
Robust construction with AEC Q101 qualification for automotive applications
Low on resistance of 8.5mΩ, optimising energy efficiency
Max continuous drain current of 78A enables handling of demanding loads
Wide operating temperature range from -55°C to 175°C for reliable performance
Thermal resistance of 1.94°C/W enhances heat dissipation capabilities
100% Avalanche tested, ensuring high reliability under transient conditions
Pb free plating and compliance with RoHS standards for environmentally-friendly design
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