ROHM RD3G04BBJHRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) RD3G04BBJHRBTL

RS庫存編號:: 687-383
製造零件編號:: RD3G04BBJHRBTL
製造商:: ROHM

ROHM RD3G04BBJHRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) RD3G04BBJHRBTL

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可享批量折扣

小計（1 組，共 2 件）*

TWD57.00

(不含稅)

TWD59.84

訂單超過 $1,300.00 免費送貨

有庫存

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單位	每單位	每膠帶*
2 - 18	TWD28.50	TWD57.00
20 - 48	TWD25.50	TWD51.00
50 - 198	TWD23.00	TWD46.00
200 - 998	TWD22.50	TWD45.00
1000 +	TWD22.00	TWD44.00

* 參考價格

RS庫存編號:: 687-383
製造零件編號:: RD3G04BBJHRBTL
製造商:: ROHM

規格

產品概覽和技術數據資料表

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產品詳細資訊

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選取全部	屬性	值
	品牌	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Drain Source Voltage Vds	-40V
	Series	RD3G04BBJHRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	24.0mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	27.6nC
	Maximum Power Dissipation Pd	53W
	Maximum Gate Source Voltage Vgs	5 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	6.8 mm
	Length	10.50mm
	Height	2.3mm
	Standards/Approvals	RoHS, AEC-Q101
	Automotive Standard	AEC-Q101

	選取全部
	品牌 ROHM
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Drain Source Voltage Vds -40V
	Series RD3G04BBJHRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 24.0mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 27.6nC
	Maximum Power Dissipation Pd 53W
	Maximum Gate Source Voltage Vgs 5 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 6.8 mm
	Length 10.50mm
	Height 2.3mm
	Standards/Approvals RoHS, AEC-Q101
	Automotive Standard AEC-Q101

Datasheet - RD3G04BBJHRBTL

The ROHM Power MOSFET delivers exceptional performance, designed specifically for high-efficiency applications. This component effectively manages power with a maximum Drain-Source voltage of -40V and continuous current handling of ±40A, making it ideal for managing electrical loads in various systems. Its low on-resistance of 24.0mΩ ensures minimal energy loss, promoting efficiency, while robust thermal characteristics allow it to operate reliably up to 175°C junction temperature. This product is not only AEC-Q101 qualified but also 100% avalanche tested, ensuring dependable functionality in critical environments. It is the perfect choice for applications in automotive systems, lighting, and industrial controls.

Low on resistance design for reduced energy loss

Outstanding thermal resistance enhances reliability in high-temperature environments

AEC Q101 qualification ensures quality and performance in automotive applications

100% avalanche testing reinforces component reliability under extreme conditions

Embossed packaging facilitates easy handling and integration into systems

Compatible with a variety of applications, including ADAS and lighting

High pulsed drain current capability of ±80A supports demanding load scenarios

Minimal gate charge enhances switching speed, improving overall efficiency

ROHM RD3G04BBJHRB Type P-Channel Single MOSFETs, -40 V Enhancement, 3-Pin TO-252 (TL) RD3G04BBJHRBTL

訂單超過 $1,300.00 免費送貨

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