ROHM RD3N045AT Type P-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-252 (TL) RD3N045ATTL1
- RS庫存編號:
- 687-488
- 製造零件編號:
- RD3N045ATTL1
- 製造商:
- ROHM
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 2 件）*
TWD31.00
(不含稅)
TWD32.56
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年1月26日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 48 | TWD15.50 | TWD31.00 |
| 50 - 198 | TWD14.00 | TWD28.00 |
| 200 - 998 | TWD12.50 | TWD25.00 |
| 1000 + | TWD10.00 | TWD20.00 |
* 參考價格
- RS庫存編號:
- 687-488
- 製造零件編號:
- RD3N045ATTL1
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | RD3N045AT | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 17W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Width | 6.8 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 80V | ||
Series RD3N045AT | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 17W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Length 10.50mm | ||
Width 6.8 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM P channel MOSFET designed for a variety of power applications. With a drain-source voltage rating of -80V and a continuous drain current capability of -4.5A, this MOSFET provides excellent electrical performance for demanding environments. Its low on-resistance of 650mΩ maximises efficiency while minimising heat generation, contributing to superior overall reliability. RoHS compliant and featuring a robust TO-252 package, the RD3N045AT is ideal for motor drives and other switching applications, ensuring robust operation in high-power scenarios. The device is rigorously tested for gate reliability and features are also halogen-free, supporting environmentally friendly practices.
Low on resistance of 650mΩ enhances efficiency and reduces power losses
Provides high power handling capabilities with a maximum power dissipation of 17W
Rated for a maximum junction temperature of 150°C, ensuring reliability under strenuous conditions
Pulsed drain current capacity of ±9A supports transient load applications
Gate-source voltage tolerance of ±20V allows for flexible circuit designs
Ideal for motor drive applications, enhancing performance in electric motors
RoHS compliant construction promotes environmental sustainability
Tested for 100% Rg and UIS reliability, ensuring robust long-term performance
相關連結
- ROHM RD3N03BAT Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3N03BATTL1
- ROHM AG191FLD3HRB Type N-Channel Single MOSFETs 60 V Enhancement, 3-Pin TO-252 (TL) AG191FLD3HRBTL
- ROHM AG086FGD3HRB Type N-Channel Single MOSFETs 40 V Enhancement, 3-Pin TO-252 (TL) AG086FGD3HRBTL
- ROHM AG501EGD3HRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) AG501EGD3HRBTL
- ROHM RD3L04BBJHRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3L04BBJHRBTL
- ROHM RD3E07BBJHRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3E07BBJHRBTL
- ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3E08BBJHRBTL
- ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3L08BBJHRBTL