ROHM RD3L08CBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08CBLHRBTL
- RS庫存編號:
- 687-440
- 製造零件編號:
- RD3L08CBLHRBTL
- 製造商:
- ROHM
N
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可享批量折扣
小計（1 組，共 2 件）*
TWD91.00
(不含稅)
TWD95.56
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月22日 發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD45.50 | TWD91.00 |
| 20 - 48 | TWD40.50 | TWD81.00 |
| 50 - 198 | TWD36.00 | TWD72.00 |
| 200 - 998 | TWD35.00 | TWD70.00 |
| 1000 + | TWD34.00 | TWD68.00 |
* 參考價格
- RS庫存編號:
- 687-440
- 製造零件編號:
- RD3L08CBLHRBTL
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | RD3L08CBLHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.8 mm | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series RD3L08CBLHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 6.8 mm | ||
Height 2.3mm | ||
Length 10.50mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for demanding applications, offering excellent efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current of 80A, this device is ideal for switching and amplification tasks in automotive and consumer electronics. Its low on-resistance of just 5.3mΩ maximises power efficiency, while its robust construction ensures it withstands harsh operational environments, meeting AEC-Q101 qualifications and providing 100% avalanche testing for enhanced safety. This MOSFET represents a powerful solution for advanced circuitry, blending performance with stringent compliance standards.
Low on resistance of 5.3mΩ significantly improves energy efficiency
Supports up to 80A continuous drain current for robust performance in demanding applications
100% avalanche tested to ensure stability and reliability during operation
AEC Q101 qualified, making it suitable for automotive applications
Wide operating junction temperature range from -55°C to +175°C ensures reliable performance in various conditions
Integrated thermal resistance of junction-case optimises power handling capabilities
Pb free and RoHS compliant, aligning with modern environmental standards.
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