ROHM AG194FPD3HRB Type N-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) AG194FPD3HRBTL
- RS庫存編號:
- 687-353
- 製造零件編號:
- AG194FPD3HRBTL
- 製造商:
- ROHM
N
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可享批量折扣
小計（1 組，共 2 件）*
TWD146.00
(不含稅)
TWD153.30
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 100 件從 2026年1月26日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD73.00 | TWD146.00 |
| 20 - 98 | TWD64.00 | TWD128.00 |
| 100 - 198 | TWD57.50 | TWD115.00 |
| 200 + | TWD45.50 | TWD91.00 |
* 參考價格
- RS庫存編號:
- 687-353
- 製造零件編號:
- AG194FPD3HRBTL
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | AG194FPD3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 142W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Width | 6.80 mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 100V | ||
Series AG194FPD3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 142W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Width 6.80 mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for applications requiring robust power management. Operating at a maximum of 100V and capable of handling continuous currents up to 80A, this component excels in delivering low on-resistance, thus minimising power loss in demanding automotive systems. Its Pb-free plating and compliance with RoHS standards ensure both environmental safety and reliability. Notably, the device is fully qualified under AEC-Q101, making it suitable for automotive applications where performance and resilience are critical. With a power dissipation capability of 142W and stringent avalanche testing, this MOSFET supports reliable operation in a variety of high-performance circuits.
Offers a low on resistance of 6.2mΩ for improved efficiency
Rated for continuous drain current of 80A, suitable for high-power applications
Features a breakdown voltage of 100V providing robustness against voltage spikes
AEC Q101 qualified, ensuring reliability in automotive environments
Avalanche tested, allowing for safe operation under transient conditions
Pb free and RoHS compliant, aligning with environmental standards
Ideal for automotive systems, enhancing power management capabilities
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