ROHM RD3L08DBKHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBKHRBTL
- RS庫存編號:
- 687-465
- 製造零件編號:
- RD3L08DBKHRBTL
- 製造商:
- ROHM
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 2 件）*
TWD71.00
(不含稅)
TWD74.56
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月22日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD35.50 | TWD71.00 |
| 20 - 48 | TWD31.00 | TWD62.00 |
| 50 - 198 | TWD28.00 | TWD56.00 |
| 200 - 998 | TWD22.50 | TWD45.00 |
| 1000 + | TWD22.00 | TWD44.00 |
* 參考價格
- RS庫存編號:
- 687-465
- 製造零件編號:
- RD3L08DBKHRBTL
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L08DBKHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Width | 6.8 mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L08DBKHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Width 6.8 mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET is engineered for high-performance in demanding applications, offering reliable switching capabilities with low on-resistance and a robust breakdown voltage. Designed to handle up to 80A of continuous drain current and with a maximum drain-source voltage of 60V, this component ensures efficiency and durability. It is ideal for automotive electronics, lighting, and other power management systems, featuring Pb-free plating and is AEC-Q101 qualified, making it compliant with the latest industry standards. This MOSFET provides a combination of exceptional thermal performance and reliability, making it a suitable choice for engineers seeking to optimise their circuit designs.
Low on resistance of 7.5mΩ maximises power efficiency
AEC Q101 qualification ensures high reliability in automotive applications
Passes 100% avalanche testing for enhanced durability
Capable of handling continuous drain current up to 80A
Maximum drain-source voltage rating of 60V provides substantial overhead
Pb free plating adheres to RoHS compliance, promoting environmental responsibility
Versatile packaging ensures compatibility across various application designs
Ideal for use in ADAS, info systems, and body control applications
Features low gate charge characteristics for faster switching times
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